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SuperSOTTM-6

AN-1026: Maximum Power Enhancement Techniques for SuperSOTTM-6 Power MOSFETs

PDFFairchildsemi
As packages become smaller, achieving efficient thermal performance for power applications requires that the designers employ new methods of meliorating the heat flow out of devices. Thus the purpose of this paper is to aid the user in maximizing the power handling capability of the SuperSOTTM-6 Power MOSFET offered by Fairchild Semiconductor. This effort allows the user to take full advantage of the exceptional performance features of Fairchild’s state-of-the-art Power MOSFET which offers very low on-resistance and improved junction-to-case (RqJC) thermal resistance. Ultimately the user may achieve improved component performance and higher circuit board packing density by using the thermal solution suggested below.