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SOT-223

SOT-223



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SOT-223 Package Dimensions
SOT-223 (FS PKG Code 47)

AN-1028: Maximum Power Enhancement Techniques for SOT-223 Power MOSFETs

PDFFairchildsemi
As packages become smaller, achieving efficient thermal performance for power applications requires that the designers employ new methods of meliorating the heat flow out of devices. Thus the purpose of this paper is to aid the user in maximizing the power handling capability of the SuperSOTTM-8 Power MOSFET offered by Fairchild Semiconductor. This effort allows the user to take full advantage of the exceptional performance features of Fairchild’s state-of-the-art Power MOSFET which offers very low on-resistance and improved junction-to-case (RqJC) thermal resistance. Ultimately the user may achieve improved component performance and higher circuit board packing density by using the thermal solution suggested below.

AN1028 Maximum Power Enhancement Techniques for SOT-223 Power MOSFETs

PDFFairchild
As packages become smaller, achieving efficient thermal performance for power applications requires that the designers employ new methods of meliorating the heat flow out of devices. Thus the purpose of this paper is to aid the user in maximizing the power handling capability of the SOT- 223 Power MOSFET offered by Fairchild Semiconductor. This effort allows the user to take full advantage of the exceptional performance features of Fairchild’s state-of-the-art Power MOSFET which offers very low on-resistance and improved junction-to-case (RqJC) thermal resistance. Ultimately the user may achieve improved component performance and higher circuit board packing
density by using the thermal solution suggested below.