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 <title>MOSFETs</title>
 <link>http://dev.emcelettronica.com/taxonomy/term/155</link>
 <description>The taxonomy view with a depth of 0.</description>
 <language>en</language>
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 <title>MOUNTING AND HANDLING GUIDELINES FOR TO-220 PACKAGES</title>
 <link>http://dev.emcelettronica.com/pcb/application_to-220</link>
 <description>&lt;p&gt;&lt;a href=&quot;http://www.aosmd.com/pdfs/appNotes/AN101_TO220_Guidelines.pdf&quot; title=&quot;TO-220&quot; target=&quot;_blank&quot;&gt;&lt;img src=&quot;/files/u4/AN101_TO220_Guidelines.jpg&quot; alt=&quot;TO-220&quot; align=&quot;left&quot; hspace=&quot;5&quot;/&gt;&lt;/a&gt; The TO-220 is a popular package for power devices because of its versatility and ability to dissipate moderate amounts of heat. This application note describes the basic guidelines for handling power MOSFETs in TO-220 packages. Please note that only mechanical and soldering guidelines are covered here. Additional precautions are required for isolating high voltage rated devices to meet safety regulations.&lt;br /&gt;
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&lt;p&gt;&lt;a href=&quot;http://dev.emcelettronica.com/pcb/application_to-220&quot;&gt;read more&lt;/a&gt;&lt;/p&gt;</description>
 <comments>http://dev.emcelettronica.com/pcb/application_to-220#comments</comments>
 <category domain="http://dev.emcelettronica.com/tutorial">RISORSE</category>
 <category domain="http://dev.emcelettronica.com/taxonomy/term/45">Pcb</category>
 <category domain="http://dev.emcelettronica.com/taxonomy/term/155">MOSFETs</category>
 <category domain="http://dev.emcelettronica.com/taxonomy/term/435">TO-220</category>
 <pubDate>Thu, 24 Jan 2008 16:48:45 +0100</pubDate>
 <dc:creator>Chris</dc:creator>
 <guid isPermaLink="false">51602 at http://dev.emcelettronica.com</guid>
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<item>
 <title> AN-558: Introduction to Power MOSFETs and Their Applications </title>
 <link>http://dev.emcelettronica.com/appnote/national/AN-558</link>
 <description>&lt;p&gt;&lt;img src=&quot;/various/national.ico&quot; /&gt; National Application Note &lt;img src=&quot;/various/link-icon_pdf_05.png&quot; /&gt;  AN-558: Introduction to Power MOSFETs and Their Applications &lt;/p&gt;
&lt;p&gt;&lt;a href=&quot;http://dev.emcelettronica.com/appnote/national/AN-558&quot;&gt;read more&lt;/a&gt;&lt;/p&gt;</description>
 <category domain="http://dev.emcelettronica.com/taxonomy/term/129">ApplicationNote</category>
 <category domain="http://dev.emcelettronica.com/taxonomy/term/155">MOSFETs</category>
 <category domain="http://dev.emcelettronica.com/taxonomy/term/340">Power</category>
 <pubDate>Sun, 30 Dec 2007 18:09:19 +0100</pubDate>
 <dc:creator>Emanuele</dc:creator>
 <guid isPermaLink="false">48948 at http://dev.emcelettronica.com</guid>
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 <title>AN-1029: Maximum Power Enhancement Techniques for SO-8 Power MOSFETs</title>
 <link>http://dev.emcelettronica.com/AppNote/Fairchild/AN1029</link>
 <description>&lt;p&gt;&lt;img src=&quot;/various/pdf.jpg&quot; alt=&quot;PDF&quot; align=&quot;left&quot; /&gt;&lt;img src=&quot;/various/fairchild.jpg&quot; alt=&quot;Fairchildsemi&quot; align=&quot;right&quot; height=&quot;47&quot; width=&quot;150&quot; /&gt;As packages become smaller, achieving efficient thermal performance for power applications requires that the designers employ new methods of meliorating the heat flow out of devices. Thus the purpose of this paper is to aid the user in maximizing the power handling capability of the SO-8 Power MOSFET offered by Fairchild Semiconductor.&lt;/p&gt;
&lt;p&gt;&lt;a href=&quot;http://dev.emcelettronica.com/AppNote/Fairchild/AN1029&quot;&gt;read more&lt;/a&gt;&lt;/p&gt;</description>
 <category domain="http://dev.emcelettronica.com/taxonomy/term/129">ApplicationNote</category>
 <category domain="http://dev.emcelettronica.com/taxonomy/term/155">MOSFETs</category>
 <category domain="http://dev.emcelettronica.com/taxonomy/term/467">SO-8</category>
 <pubDate>Thu, 22 Nov 2007 22:06:07 +0100</pubDate>
 <dc:creator>Ionela</dc:creator>
 <guid isPermaLink="false">48320 at http://dev.emcelettronica.com</guid>
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 <title>AN-1028: Maximum Power Enhancement Techniques for SOT-223 Power MOSFETs</title>
 <link>http://dev.emcelettronica.com/AppNote/Fairchild/AN1028_1</link>
 <description>&lt;p&gt;&lt;img src=&quot;/various/pdf.jpg&quot; alt=&quot;PDF&quot; align=&quot;left&quot; /&gt;&lt;img src=&quot;/various/fairchild.jpg&quot; alt=&quot;Fairchildsemi&quot;align=&quot;right&quot; height=&quot;47&quot; width=&quot;150&quot; /&gt;&lt;br /&gt;
As packages become smaller, achieving efficient thermal performance for power applications requires that the designers employ new methods of meliorating the heat flow out of devices. Thus the purpose of this paper is to aid the user in maximizing the power handling capability of the SuperSOTTM-8 Power MOSFET offered by Fairchild Semiconductor. This effort allows the user to take full advantage of the exceptional performance features of Fairchild’s state-of-the-art Power MOSFET which offers very low on-resistance and improved junction-to-case (RqJC) thermal resistance. Ultimately the user may achieve improved component performance and higher circuit board packing density by using the thermal solution suggested below.&lt;/p&gt;
&lt;p&gt;&lt;a href=&quot;http://dev.emcelettronica.com/AppNote/Fairchild/AN1028_1&quot;&gt;read more&lt;/a&gt;&lt;/p&gt;</description>
 <category domain="http://dev.emcelettronica.com/taxonomy/term/129">ApplicationNote</category>
 <category domain="http://dev.emcelettronica.com/taxonomy/term/155">MOSFETs</category>
 <category domain="http://dev.emcelettronica.com/taxonomy/term/214">SOT-223</category>
 <pubDate>Sat, 27 Oct 2007 15:36:49 +0200</pubDate>
 <dc:creator>dann</dc:creator>
 <guid isPermaLink="false">48112 at http://dev.emcelettronica.com</guid>
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<item>
 <title>AN-1026: Maximum Power Enhancement Techniques for SuperSOTTM-6 Power MOSFETs</title>
 <link>http://dev.emcelettronica.com/AppNote/Fairchild/AN1026</link>
 <description>&lt;p&gt;&lt;img src=&quot;/various/pdf.jpg&quot; alt=&quot;PDF&quot; align=&quot;left&quot; /&gt;&lt;img src=&quot;/various/fairchild.jpg&quot; alt=&quot;Fairchildsemi&quot;align=&quot;right&quot; height=&quot;47&quot; width=&quot;150&quot; /&gt;&lt;br /&gt;
As packages become smaller, achieving efficient thermal performance for power applications requires that the designers employ new methods of meliorating the heat flow out of devices. Thus the purpose of this paper is to aid the user in maximizing the power handling capability of the SuperSOTTM-6 Power MOSFET offered by Fairchild Semiconductor. This effort allows the user to take full advantage of the exceptional performance features of Fairchild’s state-of-the-art Power MOSFET which offers very low on-resistance and improved junction-to-case (RqJC) thermal resistance. Ultimately the user may achieve improved component performance and higher circuit board packing density by using the thermal solution suggested below.&lt;/p&gt;
&lt;p&gt;&lt;a href=&quot;http://dev.emcelettronica.com/AppNote/Fairchild/AN1026&quot;&gt;read more&lt;/a&gt;&lt;/p&gt;</description>
 <category domain="http://dev.emcelettronica.com/taxonomy/term/129">ApplicationNote</category>
 <category domain="http://dev.emcelettronica.com/taxonomy/term/155">MOSFETs</category>
 <category domain="http://dev.emcelettronica.com/taxonomy/term/470">SuperSOTTM-6</category>
 <pubDate>Sun, 14 Oct 2007 14:57:12 +0200</pubDate>
 <dc:creator>dann</dc:creator>
 <guid isPermaLink="false">47996 at http://dev.emcelettronica.com</guid>
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<item>
 <title>AN-1025: Maximum Power Enhancement Techniques for SuperSOTTM-3 Power MOSFETs </title>
 <link>http://dev.emcelettronica.com/AppNote/Fairchild/AN1025</link>
 <description>&lt;p&gt;&lt;img src=&quot;/various/pdf.jpg&quot; alt=&quot;PDF&quot; align=&quot;left&quot; /&gt;&lt;img src=&quot;/various/fairchild.jpg&quot; alt=&quot;Fairchildsemi&quot;align=&quot;right&quot; height=&quot;47&quot; width=&quot;150&quot; /&gt;&lt;br /&gt;
As packages become smaller, achieving efficient thermal performance for power applications requires that the designers employ new methods of meliorating the heat flow out of devices. Thus the purpose of this paper is to aid the user in maximizing the power handling capability of the SuperSOTTM-3 (SOT-23) Power MOSFET offered by Fairchild Semiconductor. This effort allows the user to take full advantage of the exceptional performance features of Fairchild’s state-of-the-art Power MOSFET which offers very low on-resistance and improved junction-tocase (RqJC) thermal resistance. Ultimately the user may achieve improved component performance and higher circuit board packing density by using the thermal solution suggested below.&lt;/p&gt;
&lt;p&gt;&lt;a href=&quot;http://dev.emcelettronica.com/AppNote/Fairchild/AN1025&quot;&gt;read more&lt;/a&gt;&lt;/p&gt;</description>
 <category domain="http://dev.emcelettronica.com/taxonomy/term/129">ApplicationNote</category>
 <category domain="http://dev.emcelettronica.com/taxonomy/term/155">MOSFETs</category>
 <category domain="http://dev.emcelettronica.com/taxonomy/term/212">SuperSOTTM-3</category>
 <pubDate>Sun, 14 Oct 2007 14:52:30 +0200</pubDate>
 <dc:creator>dann</dc:creator>
 <guid isPermaLink="false">47995 at http://dev.emcelettronica.com</guid>
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 <title>Application Bulletin AB-8 Selection of MOSFETs in Switch Mode DC-DC Converters</title>
 <link>http://dev.emcelettronica.com/AppNote/Fairchild/AB8</link>
 <description>&lt;p&gt;&lt;img src=&quot;/various/pdf.jpg&quot; alt=&quot;PDF&quot; align=&quot;left&quot; /&gt;&lt;img src=&quot;/various/fairchild.jpg&quot; alt=&quot;Fairchildsemi&quot;align=&quot;right&quot; height=&quot;47&quot; width=&quot;150&quot; /&gt;&lt;br /&gt;
This application bulletin is intended to give the system designer guidelines for choosing the optimum power MOSFET to be used with Fairchild’s family of DC-DC converter controllers. The optimum MOSFET choice will be that which meets all of the system requirements at the smallest component cost.&lt;/p&gt;
&lt;p&gt;&lt;a href=&quot;http://dev.emcelettronica.com/AppNote/Fairchild/AB8&quot;&gt;read more&lt;/a&gt;&lt;/p&gt;</description>
 <category domain="http://dev.emcelettronica.com/taxonomy/term/129">ApplicationNote</category>
 <category domain="http://dev.emcelettronica.com/taxonomy/term/155">MOSFETs</category>
 <pubDate>Sun, 14 Oct 2007 13:59:12 +0200</pubDate>
 <dc:creator>dann</dc:creator>
 <guid isPermaLink="false">47975 at http://dev.emcelettronica.com</guid>
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 <title>AB-15 Using Surface Mount Power MOSFETs in Processor Power Supplies</title>
 <link>http://dev.emcelettronica.com/AppNote/Fairchild/AB15</link>
 <description>&lt;p&gt;&lt;img src=&quot;/various/pdf.jpg&quot; alt=&quot;PDF&quot; align=&quot;left&quot; /&gt;&lt;img src=&quot;/various/fairchild.jpg&quot; alt=&quot;Fairchildsemi&quot;align=&quot;right&quot; height=&quot;47&quot; width=&quot;150&quot; /&gt;&lt;br /&gt;
Surface mount power MOSFETs are becoming increasingly popular for use in processors’ switch-mode power supplies. Ensuring that they operate as planned requires careful attention to their thermal environment, in particular pad size. This Application Bulletin gives the designer and the layout specialist the information necessary to create a successful design.&lt;/p&gt;
&lt;p&gt;&lt;a href=&quot;http://dev.emcelettronica.com/AppNote/Fairchild/AB15&quot;&gt;read more&lt;/a&gt;&lt;/p&gt;</description>
 <category domain="http://dev.emcelettronica.com/taxonomy/term/129">ApplicationNote</category>
 <category domain="http://dev.emcelettronica.com/taxonomy/term/155">MOSFETs</category>
 <pubDate>Thu, 11 Oct 2007 22:42:53 +0200</pubDate>
 <dc:creator>dann</dc:creator>
 <guid isPermaLink="false">47896 at http://dev.emcelettronica.com</guid>
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