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The TO-220 is a popular package for power devices because of its versatility and ability to dissipate moderate amounts of heat. This application note describes the basic guidelines for handling power MOSFETs in TO-220 packages. Please note that only mechanical and soldering guidelines are covered here. Additional precautions are required for isolating high voltage rated devices to meet safety regulations.

National Application Note AN-558: Introduction to Power MOSFETs and Their Applications

As packages become smaller, achieving efficient thermal performance for power applications requires that the designers employ new methods of meliorating the heat flow out of devices. Thus the purpose of this paper is to aid the user in maximizing the power handling capability of the SO-8 Power MOSFET offered by Fairchild Semiconductor.

As packages become smaller, achieving efficient thermal performance for power applications requires that the designers employ new methods of meliorating the heat flow out of devices. Thus the purpose of this paper is to aid the user in maximizing the power handling capability of the SuperSOTTM-8 Power MOSFET offered by Fairchild Semiconductor. This effort allows the user to take full advantage of the exceptional performance features of Fairchild’s state-of-the-art Power MOSFET which offers very low on-resistance and improved junction-to-case (RqJC) thermal resistance. Ultimately the user may achieve improved component performance and higher circuit board packing density by using the thermal solution suggested below.

As packages become smaller, achieving efficient thermal performance for power applications requires that the designers employ new methods of meliorating the heat flow out of devices. Thus the purpose of this paper is to aid the user in maximizing the power handling capability of the SuperSOTTM-6 Power MOSFET offered by Fairchild Semiconductor. This effort allows the user to take full advantage of the exceptional performance features of Fairchild’s state-of-the-art Power MOSFET which offers very low on-resistance and improved junction-to-case (RqJC) thermal resistance. Ultimately the user may achieve improved component performance and higher circuit board packing density by using the thermal solution suggested below.

As packages become smaller, achieving efficient thermal performance for power applications requires that the designers employ new methods of meliorating the heat flow out of devices. Thus the purpose of this paper is to aid the user in maximizing the power handling capability of the SuperSOTTM-3 (SOT-23) Power MOSFET offered by Fairchild Semiconductor. This effort allows the user to take full advantage of the exceptional performance features of Fairchild’s state-of-the-art Power MOSFET which offers very low on-resistance and improved junction-tocase (RqJC) thermal resistance. Ultimately the user may achieve improved component performance and higher circuit board packing density by using the thermal solution suggested below.

This application bulletin is intended to give the system designer guidelines for choosing the optimum power MOSFET to be used with Fairchild’s family of DC-DC converter controllers. The optimum MOSFET choice will be that which meets all of the system requirements at the smallest component cost.

Surface mount power MOSFETs are becoming increasingly popular for use in processors’ switch-mode power supplies. Ensuring that they operate as planned requires careful attention to their thermal environment, in particular pad size. This Application Bulletin gives the designer and the layout specialist the information necessary to create a successful design.