Freescale optimizes 50V LDMOS RF transistor line-up for TV broadcast transmitters
Freescale Semiconductor introduced a 50V laterally diffused MOS (LDMOS) RF power transistor designed to streamline UHF transmitter equipment designs.
The MRF6V3090N device demonstrates industry-leading RF figures of merit, and when combined with Freescale’s MRF6VP3450H transistor, is designed to enable system-level power reductions that can potentially save broadcasters thousands of dollars in operating costs.
Transmitters represent a significant operating cost for TV broadcasters, and a leading contributor to this operating cost is the power consumed by RF power amplifiers. Highly efficient RF power transistors, such as the MRF6V3090N and MRF6VP3450H, can help reduce this cost by converting a greater percentage of the required DC input power into RF output power. In addition, individual transistors with higher RF power capability enhance system-level efficiency by minimizing device count and combining losses.
The MRF6V3090N achieves 21 dB power gain and drain efficiency of 12 percent with an average output power of 4.5W, based on a DVB-T OFDM signal. The adjacent-channel power ratio (ACPR) at a 4 MHz offset is -68 dBc over a 4 kHz integration bandwidth. As an analog or digital TV final for low power repeaters, the device has typical UHF broadband performance of greater than 40 percent efficiency, 21 dB gain and an IM3 of less than -30 dBc.
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- Ionela's blog
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LDMOS vs tube
Talking from an end-user point of view, LDMOS is the preferred transmitter final amplifier device over much expensive tube devices like the IOT. When a tube breaks down, you lose all your output power. With LDMOS, you lose one or more devices but you will still be on air. The only disadvantage of LDMOS is lesser power efficiency compared to tube. So any development in terms of power efficiency, as discussed in this article, will be a welcome development for broadcast engineers.
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