Most of the CMOS ICs, when in proper condition, can “latch” just like an SCR, thus creating a short circuit from the positive supply voltage to ground.

The automotive environment has always been a physical challenge, but developing ecological and commercial constraints need ever more ingenious and innovative solutions, which NXP is committed to providing.

A microFET MOAFET of dimensions 2mm x 2mm x 0.55mm working at 20V is said to provide the lowest Rds(on) in the industry.

There are multiple variables involved when selecting the proper MOSFET driver for the MOSFET being used in your design.

The FDP025N06, FDB024N06, FDP032N08, FDB031N08, FDP047N10, FDB047N10 family of 60V to 100V N-Channeln MOSFETs is designed with proprietary PowerTrench technology to deliver low RDS(ON), while maintaining high performance.

This example converts a 12 volt power source to an output of 5 volts with a 2 amp load. Switching frequency is selected at 400 kHz.

SuperFET technology utilizes a stripe-based horizontal layout with vertical deep p-stripes, which signifi cantly reduces on-resistance and enhances avalanche energy in commutation mode. It implements a compensation region using multi-epi layers which lower resistance in the vertical drift region of a MOSFET in order to improve the on-resistance.

Fairchild has over 35 years of design and manufacturing experience as a worldwide automotive semiconductor supplier. Fairchild's breadth of products and depth of semiconductor design and automotive applications expertise covers the full spectrum of automotive systems.

The SuperMESH series is obtained through an extreme optimization of ST’s well established stripbased PowerMESH layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications. Such series complements ST full range of high voltage MOSFETs including revolutionary MDmesh products.

Addition to IntelliFETTM Product Range Reduces Board Space by 85%